Ion beam etching (IBE) removes material from the etch target by bombardment with directed and precisely controlled ion energies. IBE is also referred to as ´ion beam milling.´
The IBE source generates plasma from a noble gas, typically argon. A set of electrically biased grids establish the ion beam energy and angular divergence of ions within the beam. The ion beam strikes the substrate, removing material by physical sputtering.
- Teacher: Marek Eliáš